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Negative refraction in the double quantum dot system

机译:双量子点系统中的负折射

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This work proposes a double quantum dot (DQD) system, with a wetting layer (WL) is included, to study the negative refractive index (NRI) under the application of the electric fields: pump, probe, and fields between WL-QD state, in addition to the magnetic field. The density matrix theory is used to write the equation of motion and an orthogonalized plane wave is used between WL-QD states. The results show that the DQD system exhibit NRI ordinarily until with pump and probe signals, only, due to the manipulation between states. A high NRI corresponding to neglected absorption is obtained under applied electric fields between QD-QD, the conduction (CB) and valence bands (VB) WL-QD fields. It is shown that the main requirement in increasing NRI is the high electric gain connected with a low magnetic one. This can be obtained under five applied electric fields in addition to a high VB WL-QD electric field. Neglecting WL reduces NRI by~16 times. In single QD, the NRI is very small compared with DQD.
机译:该工作提出了一种双量子点(DQD)系统,包括润湿层(WL),以研究电场的应用下的负折射率(NRI):WL-QD状态之间的泵,探头和场除了磁场之外。密度矩阵理论用于写入运动的等式,并且在WL-QD状态之间使用正交化平面波。结果表明,DQD系统通常展示NRI,直到泵和探针信号,由于状态之间的操纵。在QD-QD,传导(CB)和价带(VB)WL-QD场之间的应用电场下获得对应于被忽略的吸收的高NRI。结果表明,增加NRI的主要要求是与低磁性连接的高电增益。除了高VB WL-QD电场之外,这可以在五个施加的电场下获得。忽略WL将NRI减少〜16次。在单个QD中,与DQD相比,NRI非常小。

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