Investigation of dependence the hole radius formed in InGaP on the group velocity, quality factor and defect band structures

摘要

In this paper, the structure being investigated consists of periodic layers of InGaP containing a defect region in air hole and GaAs. Finite difference time-domain calculations were performed to show the influences of hole radius on the group velocity (V-g), quality (Q) factor and transmission of the structure. As well as effect the hole radius deviation on the Q factor. Also, we will investigate property of the defect region on the band structures.