Modeling of dark characteristics for long-wavelength HgCdTe photodiode

摘要

A data-processing approach has been developed to obtain device parameters from resistance-voltage (R-V) characteristics measured on long-wavelength HgCdTe n-on-p photodiodes. A simple carrier density approximation is proposed to take account of carrier degeneracy and conduction band non-parabolicity into its physical model. Some basic parameters and their estimated errors can be extracted from the measured R-V curves. The method is applied to fit the R-V curves measured at different temperatures. We also analyze larger amount of long-wavelength HgCdTe n-on-p photodiodes, and obtain statistical device parameters.