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机译:腔内发光器中的电致发光冷却:建模和实验
Department of Neuroscience and Biomedical Engineering, Aalto University, P.O. Box 12200, 00076 Aalto, Finland;
Department of Neuroscience and Biomedical Engineering, Aalto University, P.O. Box 12200, 00076 Aalto, Finland,Division of Solid State Physics and NanoLund, Lund University, P.O. Box 118, 22100 Lund, Sweden;
Department of Neuroscience and Biomedical Engineering, Aalto University, P.O. Box 12200, 00076 Aalto, Finland;
Department of Neuroscience and Biomedical Engineering, Aalto University, P.O. Box 12200, 00076 Aalto, Finland;
Department of Neuroscience and Biomedical Engineering, Aalto University, P.O. Box 12200, 00076 Aalto, Finland;
Department of Neuroscience and Biomedical Engineering, Aalto University, P.O. Box 12200, 00076 Aalto, Finland;
Electroluminescent cooling; Intracavity light emitters; Ⅲ-As; Light-emitting diodes; Photodiodes;
机译:InGaN / GaN发光二极管中的电致发光冷却机理
机译:III–V型腔内二极管的电致发光冷却:实际要求
机译:通过将电子传输材料混合到发光层中,使用ZninP / ZnSe / ZnS量子点在量子点发光二极管中的改善电致发光特性
机译:GaN基发光二极管中增强的电致发光冷却
机译:光学随机冷却原理实验的光传输和放大
机译:冷热混合白色有机发光二极管带有蓝色延迟荧光发射器同时作为蓝色发射器和三重态宿主
机译:III-V Intrachavity二极管中的电致发光冷却:实用要求