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Hot electron refluxing in the short intense laser pulse interactions with solid targets and its influence on K-alpha radiation

机译:短强激光脉冲与固体靶相互作用中的热电子回流及其对K-alpha辐射的影响

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摘要

Fast electrons created as a result of the laser beam interaction with a solid target penetrate into the target material and initialize processes leading to the generation of the characteristic X-ray K-alpha radiation. Due to the strong electric field induced at the rear side of a thin target the transmitted electrons are redirected back into the target. These refluxing electrons increase the K-alpha radiation yield, as well as the duration of the X-ray pulse and the size of the radiation emitting area. A model describing the electron refluxing was verified via particle-in-cell simulations for non-relativistic electron energies. Using this model it was confirmed that the effect of the electron refluxing on the generated X-ray radiation depends on the target thickness and the target material. A considarable increase of the number of the emitted K-alpha photons is observed especially for thin targets made of low-Z materials, and for higher hot electron temperatures.
机译:由于激光束与固体靶相互作用而产生的快速电子会渗透到靶材料中,并初始化过程,从而产生特征性X射线K-α辐射。由于在薄靶材的背面感应出强电场,因此透射电子被重定向回靶材。这些回流的电子增加了K-alpha辐射的产量,以及X射线脉冲的持续时间和辐射发射区域的大小。通过对非相对论电子能量的粒子模拟,验证了描述电子回流的模型。使用该模型,可以确认电子回流对产生的X射线辐射的影响取决于目标厚度和目标材料。特别是对于由低Z材料制成的薄靶以及较高的热电子温度,观察到的发射K-α光子数量显着增加。

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