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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Investigation of Li/Nb-sublattices in ion implanted LiNb03 by RBS and NRA in channelling configuration
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Investigation of Li/Nb-sublattices in ion implanted LiNb03 by RBS and NRA in channelling configuration

机译:离子注入的LiNb03中的Li / Nb亚晶格通过沟道结构的RBS和NRA研究

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摘要

Differently oriented LiNbO_3 crystals were implanted at room temperature with 1 MeV iodine ions to flu-ences between 2 x 10~(13) and 1 x 10~(14)cm~(-2), which cover the transition from a low damage level up to complete amorphisation. The aim of this work was to explore the use of nuclear reaction analysis (NRA) in combination with Rutherford backscattering spectrometry (RBS) in channelling configuration for studying the damage evolution as a function of the ion fluence in both the Li and Nb sublattice. Protons with energies between 1.4 and 1.6 MeV and a standard RBS setup were used. Scattering events detected at low energies result from Rutherford backscattering of protons on Nb and 0 atoms. At high energies alpha particles are registered, which result from the nuclear reaction between protons and Li atoms. Along different low-index crystallographic directions channelling effects within both the RBS and NRA part of the spectra are observed. However, the strength of channeling within the NRA part depends on the crystallographic direction investigated. These effects are explained by the nature of ion-channelling with respect to the small atomic number of Li and is supported by calculations of minimum yields (ratio of scattering yield in aligned and random direction) applying the computer code DICADA. The consequence is that damage studies with NRA can be only performed in Z-direction of LiNbO_3. In this case, the Li and Nb sublattice were found to be similarly damaged after 1 MeV iodine implantation.
机译:在室温下注入1 MeV碘离子注入取向不同的LiNbO_3晶体,其通量在2 x 10〜(13)和1 x 10〜(14)cm〜(-2)之间,这涵盖了从低损伤水平的过渡直至完成非晶化。这项工作的目的是探索在通道配置中结合核反应分析(NRA)与卢瑟福背散射光谱(RBS)的用途,以研究在Li和Nb子晶格中损伤演化与离子注量的关系。使用能量在1.4到1.6 MeV之间的质子和标准的RBS设置。低能检测到的散射事件是由于质子在Nb和0原子上的卢瑟福(Rutherford)背散射而引起的。在高能状态下,由于质子与Li原子之间的核反应而产生了α粒子。沿着不同的低折射率晶体学方向,在光谱的RBS和NRA部分都观察到了通道效应。但是,NRA部分内部通道的强度取决于所研究的晶体学方向。这些效应是由离子通道化的性质(相对于Li的小原子数)解释的,并由使用计算机代码DICADA计算最小产率(在对准和随机方向上的散射产率之比)来支持。结果是,使用NRA进行的损伤研究只能在LiNbO_3的Z方向上进行。在这种情况下,发现植入1 MeV碘后,Li和Nb亚晶格受到类似的破坏。

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    Institut far Festkbrperphysik, Friedrich-Schiller-Universitat Jena, Max-Wien-Platz 1, 07743 Jena, Germany;

    Institut far Festkbrperphysik, Friedrich-Schiller-Universitat Jena, Max-Wien-Platz 1, 07743 Jena, Germany;

    Institut far Festkbrperphysik, Friedrich-Schiller-Universitat Jena, Max-Wien-Platz 1, 07743 Jena, Germany;

    Institut far Festkbrperphysik, Friedrich-Schiller-Universitat Jena, Max-Wien-Platz 1, 07743 Jena, Germany;

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  • 正文语种 eng
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  • 关键词

    LiNbO_3; Ion beam analysis; NRA; Channeling; Defect formation;

    机译:LiNbO_3;离子束分析;NRA;引导;缺陷形成;

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