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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Calculation of electron-beam induced displacement in thin films by using parameter-reduced formulas
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Calculation of electron-beam induced displacement in thin films by using parameter-reduced formulas

机译:用参数约简公式计算薄膜中的电子束感应位移

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摘要

Based on the Mott cross sections of relativistic electron collisions with atoms, we calculate displacement creation by electron beams of arbitrary energies (up to 100 MeV) in thin films of arbitrary atomic numbers (up to Z = 90). In a comparison with Mont Carlo full damage cascade simulations, we find that total number of displacements in a film can be accurately estimated as the product of average displacements created per collision and average collision numbers in the film. To calculate average displacements per electron-atom collision, energy transfer from Mott cross section is combined with NRT model. To calculate collision numbers, mean deflection angles and multi-scattering theory are combined to extract collision number dependence on film thickness. For each key parameter, parameter-reduced formulas are obtained from data fitting. The fitting formulas provide a quick and accurate method to estimate radiation damage caused by electron beams.
机译:基于相对论电子与原子碰撞的莫特截面,我们计算了任意原子序数(至多Z = 90)的薄膜中任意能量(至多100 MeV)的电子束产生的位移。通过与蒙特卡罗全损伤级联模拟的比较,我们可以准确地估算出薄膜中的位移总数,作为每次碰撞产生的平均位移与薄膜中平均碰撞数的乘积。为了计算每个电子-原子碰撞的平均位移,将莫特截面的能量转移与NRT模型结合。为了计算碰撞次数,将平均偏转角和多重散射理论相结合,以提取碰撞次数对薄膜厚度的依赖性。对于每个关键参数,可通过数据拟合获得参数简化的公式。拟合公式提供了一种快速而准确的方法来估算由电子束引起的辐射损伤。

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  • 作者单位

    College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001, PR China;

    Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843, USA;

    College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001, PR China;

    College of Nuclear Science and Technology, Harbin Engineering University, Harbin 150001, PR China;

    Department of Nuclear Engineering, Texas A&M University, College Station, TX 77843, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Displacements; Electron; Mott cross section; Simulations;

    机译:排量;电子;莫特横截面;模拟;

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