Temperature-dependent photoluminescence processes of GalnP top cell irradiated with 11.5 MeV and 1.0 MeV electrons

摘要

The effects of 11.5 MeV electrons irradiation on the GaInP top cell of GaInP/GaAs/Ge triple-junction solar cells have been investigated by temperature-dependent photoluminescence (PL) measurements. The thermal quenching of PL intensity is observed in the temperature range of 10 K-270 K, attributing to the nonradiative recombination centers H2 (E-v + 0.55 eV) hole trap and H3 (E-v + 0.76 eV) hole trap. A slight negative thermal quenching (NTQ) of PL intensity exists at nearly 300 K and could be associated with the 0.18 eV intermediate states. The temperature-dependent photoluminescence process of GaInP top cell irradiated with 11.5 MeV electrons differs with that irradiated with 1.0 MeV electrons.