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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >A systematic study of the performance of the CsI:Tl single-crystal scintillator under X-ray excitation
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A systematic study of the performance of the CsI:Tl single-crystal scintillator under X-ray excitation

机译:X射线激发下CsI:Tl单晶闪烁体性能的系统研究

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The light emission performance of the X-ray excited CsI:Tl single-crystal scintillator was investigated as a function of X-ray tube voltage and crystal thickness. Four CsI:Tl single-crystal layers (CRYOS Ltd., Ukraine) with thickness from 1 to 7 mm were irradiated employing two X-ray tube voltage ranges: (ⅰ) the 22-45 kV (molybdenum anode-molybdenum filter (Mo/Mo)) range, employed in mammographic imaging and (ⅱ) the 40-140 kV (tungsten anode-aluminum filter) tube voltage range, used in general X-ray projection and tomographic imaging. The X-ray luminescence efficiency (light emission spectrum over incident X-ray fluence) of the crystals was determined by performing light emission spectrum and X-ray exposure measurements. In addition, the intrinsic conversion efficiency (fraction of the absorbed X-ray converted into light) and the spectral compatibility to various optical detectors were estimated from these measurements. The luminescence efficiency was found to be a nonlinear function of crystal thickness and of X-ray tube voltage. Peak efficiency (29.5 μWm~(-2) /mRs) was observed for the 5 mm thick crystal at 140 kV. A secondary efficiency peak was observed at 42 kV (Mo anode) probably due to the effect of the K-photoelectric absorption edge (at 33 and 35 keV for Cs and I, respectively). For the thicker (7 mm) crystal, the efficiency was found to decrease due to light attenuation effects within the scintillator mass.
机译:研究了X射线激发的CsI:Tl单晶闪烁体的发光性能与X射线管电压和晶体厚度的关系。使用两个X射线管电压范围辐照四个厚度为1到7毫米的CsI:Tl单晶层(乌克兰CRYOS公司):(ⅰ)22-45 kV(钼阳极-钼滤光片(Mo / Mo))范围,用于乳腺X射线摄影成像,以及(ⅱ)40-140 kV(钨阳极-铝滤光片)管电压范围,用于一般X射线投影和X射线层析成像。通过执行发光光谱和X射线曝光测量来确定晶体的X射线发光效率(入射X射线通量上的发光光谱)。此外,从这些测量值估计出固有的转换效率(吸收的X射线转换成光的分数)和对各种光学检测器的光谱兼容性。发现发光效率是晶体厚度和X射线管电压的非线性函数。在140 kV下观察到5mm厚晶体的峰值效率(29.5μWm〜(-2)/ mRs)。在42 kV(Mo阳极)观察到次级效率峰值,这可能是由于K光电吸收边缘的影响(对于Cs和I,分别为33和35 keV)。对于较厚(7毫米)的晶体,发现效率由于闪烁体内部的光衰减效应而降低。

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