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机译:开发用于高辐射环境的n-p硅传感器
Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba-shi, Ibaraki-ken 305-0801, Japan;
Oliver Lodge Laboratory, University of Liverpool, P.O. Box 147, Oxford Street, UK-Liverpool L69 3BX, United Kingdom;
Oliver Lodge Laboratory, University of Liverpool, P.O. Box 147, Oxford Street, UK-Liverpool L69 3BX, United Kingdom;
Department of Physics and Astronomy, University of Glasgow, UK-Glasgow G12 8QQ, United Kingdom;
Santa Cruz Institute for Particle Physics (SC1PP), University of California Santa Cruz, Santa Cruz, CA 95064, USA;
silicon sensor microstrip p-type n-in-p atlas slhc radiation damage;
机译:开发用于超高辐射环境的n〜+ in-p大面积硅微带传感器-ATLAS12设计和初步结果
机译:开发适用于极高辐射环境的n-in-p硅平面像素传感器和倒装芯片模块
机译:用于ATLAS升级的新型硅n-p边缘无平面像素传感器
机译:高辐射环境中应用硅辐射探测器的研制
机译:测量阿特拉斯IBL中的辐射损坏,包括3D和平面硅传感器之间的比较
机译:基于硅MEMS技术的高温环境高一致性光纤法布里 - 珀罗压力传感器
机译:HL-LHC辐射流量后薄平面N-ON-P硅像素的性能