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Extended lifetime MCP-PMTs: Characterisation and lifetime measurements of ALD coated microchannel plates, in a sealed photomultiplier tube

机译:延长使用寿命的MCP-PMT:在密封的光电倍增管中对ALD涂层微通道板进行表征和寿命测量

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Atomic layer deposition (ALD) coating of microchannel plates (MCP) has been shown to offer significant performance advantages in MCP-PMTs (MCP Photomultiplier Tube). ALD is a chemical vapour process used to deposit atomic mono-layers on a substrate. A process has been developed to deposit a surface with improved secondary emission yield (SEY) on to an MCP substrate. The principal advantage of a higher SEY is the ability to achieve significantly higher gain at the same operating voltage across a single MCP. Further to this, it is suspected the atomic mono-layers deposited by ALD coating prevent desorption of gaseous contaminants in the MCP glass. The ions produced during desorption are widely believed to be a direct cause of photocathode ageing in MCP-PMTs, leading to the hope that ALD coating can improve the MCP-PMT lifetime. To fully characterise the performance of ALD coated MCPs, two MCP-PMTs were manufactured, one ALD coated and the other uncoated to be used as a reference. Each detector's gain, DQE, pulse shape and timing jitter were measured followed by a life test of the tubes. The ALD coated tube was found to have a higher gain at the same operating voltage, whilst being equivalent to a standard MCP in other performance characteristics. ALD coating gave a dramatically improved life time, after 5.16 C cm~(-2) total charge extracted, there was no measurable effect on the photocathode QE, although the MCP gain dropped by approximately 35%.
机译:已经证明,微通道板(MCP)的原子层沉积(ALD)涂层在MCP-PMT(MCP光电倍增管)中具有明显的性能优势。 ALD是一种化学气相工艺,用于在基板上沉积原子单层。已经开发出一种将具有改进的二次发射产率(SEY)的表面沉积到MCP衬底上的方法。较高的SEY的主要优点是能够在单个MCP上以相同的工作电压实现明显更高的增益。此外,怀疑通过ALD涂层沉积的原子单层阻止了MCP玻璃中气态污染物的解吸。人们普遍认为,在解吸过程中产生的离子是MCP-PMT中光电阴极老化的直接原因,从而导致人们希望ALD涂层可以改善MCP-PMT的寿命。为了充分表征ALD涂层的MCP的性能,制造了两种MCP-PMT,其中一种ALD涂层,另一种未经涂层作为参考。测量每个检测器的增益,DQE,脉冲形状和定时抖动,然后对电子管进行寿命测试。发现在相同的工作电压下具有ALD涂层的管具有更高的增益,同时在其他性能特征方面与标准MCP相当。 ALD涂层显着改善了使用寿命,在提取了5.16 C cm〜(-2)的总电荷后,尽管MCP增益下降了约35%,但对光电阴极QE却没有可测量的影响。

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