机译:使用0.18μmCMOS工艺的CMOS像素传感器的电荷收集和非电离辐射容限
State Key Laboratory of Particle Detection and Electronics, Beijing 100049, China,Institute of High Energy Physics, 19B YuquanLu, Beijing 100049, China;
State Key Laboratory of Particle Detection and Electronics, Beijing 100049, China,Institute of High Energy Physics, 19B YuquanLu, Beijing 100049, China;
Shandong University, No. 27 South Shandong University Road, Jinan 250100, China;
Ocean University of China, No. 238 Songling Road, Qingdao 266100, China;
CEPC vertex detector; CPS; TCAD simulation; Charge collection; Radiation damage;
机译:具有小型收集电极的CMOS像素传感器的模拟,提高了更快的电荷收集和增加的辐射耐受性
机译:CMOS单块有源像素传感器对非电离辐射的公差的间距依赖性
机译:CMOS单块有源像素传感器的工艺改进,以增强耗尽,定时性能和辐射耐受性
机译:具有0.18 / spl mu / m CMOS技术的像素级ADC和脉宽调制的CMOS图像传感器的新数字像素架构
机译:使用CMOS有源像素传感器的片上空间图像处理。
机译:使用标准的0.18-μmCMOS工艺制造的微磁场传感器
机译:采用0.18美元/微米CMOS工艺制造的CMOS单片有源像素传感器的非电离辐射硬度