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Development of a new generation of 3D pixel sensors for HL-LHC

机译:开发用于HL-LHC的新一代3D像素传感器

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摘要

This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.
机译:本文涵盖了与针对高亮度LHC升级的新一代小尺寸像素薄型3D像素传感器的开发相关的主要技术和设计方面。

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  • 作者单位

    Universita di Trento, Dipartimento di Ingegneria Industriale, I-38123 Trento, Italy,TIFPA INFN, I-38123 Trento, Italy;

    Fondazione Bruno Kessler, I-38123 Trento, Italy,TIFPA INFN, I-38123 Trento, Italy;

    INFN Sezione di Geneva, I-16146 Genova, Italy;

    Universita di Trento, Dipartimento di Ingegneria Industriale, I-38123 Trento, Italy,TIFPA INFN, I-38123 Trento, Italy;

    INFN Sezione di Firenze, I-50019 Sesto Fiorentino, Italy;

    Universita di Pisa, Dipartimento di Fisica, I-56127 Pisa, Italy,INFN, Sezione di Pisa, I-56127 Pisa, Italy;

    Fondazione Bruno Kessler, I-38123 Trento, Italy;

    Universita di Trento, Dipartimento di Ingegneria Industriale, I-38123 Trento, Italy,TIFPA INFN, I-38123 Trento, Italy;

    Fondazione Bruno Kessler, I-38123 Trento, Italy,TIFPA INFN, I-38123 Trento, Italy;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    3D silicon sensors; Deep Reactive Ion Etching; Fabrication technology;

    机译:3D硅传感器;深度反应离子刻蚀;制作技术;

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