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Crystal growth and scintillation properties of pure and Tl-doped Cs_3Cu_2I_5

机译:纯和TL掺杂CS_3CU_2I_5的晶体生长和闪烁性能

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摘要

In this work the Bridgman crystal growth and scintillation properties of both undoped and Tl-doped Cs_3Cu_2I_5 are presented. This material is very attractive for gamma and X-ray detection applications, with a density of 4.53 g/cm~3 and effective atomic number of 51.9. Undoped Cs_3Cu_2I_5 had a light yield of 41,500 photons/MeV, with an energy resolution of 4.4% at 662 keV. Thallium doping at 0.5 mol % resulted in a much-improved scintillation response, in which light yield increased to 98,200 photons/MeV and energy resolution reduced to 3.3% at 662 keV. The X-ray excited emission is centered at 442 nm for the undoped and 500 nm for the Tl-doped crystals. The undoped emission is broad, typical of excitonic emission, while thallium doping results in an even broader band with features of both the undoped and thallium defect-mediated emissions.
机译:在这项工作中,提出了未掺杂和TL掺杂的CS_3CU_2I_5的Bridgman晶体生长和闪烁性质。这种材料对于伽马和X射线检测应用非常有吸引力,密度为4.53g / cm〜3,有效原子数为51.9。未掺杂的CS_3CU_2I_5具有41,500光子/ MEV的优点,能量分辨率为4.4%,662 keV。赋予0.5mol%的铊导致闪烁响应大大提高,其中光产率增加到98,200光子/ MEV和能量分辨率在662keV下降至3.3%。 X射线激发发射以442nm为中心,对于TL掺杂的晶体,未掺杂和500nm。未掺杂的排放是宽泛的,典型的兴趣排放,而铊掺杂导致甚至更广泛的带,具有未掺杂和铊缺陷介导的排放的特征。

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