Testbeam studies on pick-up in sensors with embedded pitch adapters

摘要

Embedded pitch adapters are an alternative solution to external pitch adapters widely used to facilitate the wire-bonding step when connecting silicon strip sensors and readout electronics of different pitch. The pad-pitch adaption can be moved into the sensor fabrication step by implementing a second layer of metal tracks, connected by vias to the primary metal layer of sensor strips. Such a solution, however, might bear the risk of performance losses introduced by various phenomena. One of these effects, the undesired capacitive coupling between the silicon bulk and this second metal layer (pick-up) has been investigated in photon testbeam measurements. For a worst-case embedded pitch adapter design, expected to be maximally susceptible to pick-up, a qualitative analysis has visualised the effect as a function of the location on the second metal layer structure. It was further found that the unwanted effect decreases towards expected values for operating thresholds of the binary readout used. Suggestions for more in-depth and quantitative studies are also derived.