Development of integration-type silicon-on-insulator monolithic pixel detectors using a float zone silicon

摘要

In this paper, we describe the development of monolithic pixel detectors using silicon-on-insulator (SOI) technology for a rapid X-ray residual stress measurement system. Conventional two-dimensional X-ray detectors are not suitable for rapid X-ray residual stress measurement because of their large pixel size and slow readout. For this reason, we developed highly sensitive SOI monolithic pixel detectors that are made up of smaller pixels and can provide a more rapid X-ray residual stress measurement readout. The detectors are fabricated using a 0.2 μm CMOS fully-depleted SOI process (Lapis Semiconductor Co., Ltd). The SOI wafer is made by directly bonding a thick, high-resistivity Si wafer and a low-resistivity Si CMOS wafer. The process does not make use of mechanical bump bonding. We developed an integration-type SOI pixel detector, INTPIX4, for a rapid X-ray residual stress measurement system; it uses a float zone (FZ) or Czochralski (Cz) silicon wafer. Cz SOI detectors have been in use since 2005. After 2011, FZ SOI detectors were successfully fabricated. In this paper, we state recent progresses and test results of the SOI monolithic pixel detector using a FZ silicon and compare them with the results obtained using the Cz detector.