Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons

摘要

In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. In the present work proton and neutron fluence-dependent radiation damage effects, including the change in leakage current and effective doping concentration, space charge sign-inversion, but also introduction and annealing of point- and cluster-like defects have been studied in Si pad diodes fabricated from p-type EPI material of different resistivity (10-1000 Ω cm). Standard electrical characterisations (IV, CV), TCT (Transient Current Technique) and TSC (Thermally Stimulated Current) techniques were applied. A correlation between effective doping concentration obtained from CV measurements and defect concentration N_t extracted from TSC measurements for both - neutron and proton - irradiations was observed pointing towards the microscopic origin of the acceptor removal. A detailed analysis of the dominant TSC peaks - E(30), B_iO_i and three main deep acceptor levels H(116), H(140) and H(152) - responsible for the changes in the effective space charge is performed. The origin and annealing behaviour of E(30) and H(40) and other cluster-related defects are discussed as well.