机译:等离子体诱导的缺陷团簇增强受损钨中氘的保留
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Republic of Korea;
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Republic of Korea;
Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea;
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Republic of Korea;
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Republic of Korea;
Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea;
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Republic of Korea;
retention; defect cluster; hydrogen plasma; tungsten; fusion reactor;
机译:辐射损伤对自植入钨等离子体诱导的氘保留的影响
机译:离子通量对钨和钨钽合金中等离子体诱导的改性和氘保留的影响
机译:准均质受损钨的缺陷产生和氘保留
机译:用能量电子,自离子和中子预损伤钨氘保留的比较
机译:氩气对序贯和同时离子辐射下多晶硅钨氘保留的影响
机译:等轴纳米晶钨和超细钨-TiC合金的原位氦注入和对氦气气泡损伤的辐射耐受性的TEM研究
机译:离子通量对钨和钨钽合金等离子体诱导改性和氘保留的影响