estimating the Noise Parameters of Mickrowave Transistors

摘要

A method of estimating the nosie parameters of microwave transistors is presented. The parameters are esimated from the values of the admittance (or impedance) of an external nise source and the respective noise figures of the transistor, all of the quantities being measured at the same frequency. The application of the method ot a field-effect transistor (FET) is reported.