Degradation Kinetics of Semiconductor Structures Affected by High-Power Microwave Pulses

摘要

A model is proposed for the degradation of semiconductor structures (SSs) affected by high-power microwave pulses (HPMPs). This model is used for investigation the influence of the current instability on the degradation kinetics. It is demonstrated that single pulses may case only catastrophic fillers, while pulse sequences may cause both catastrophic failures and structure blindness.