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首页> 外文期刊>Journal of Communications Technology and Electronics >Calculation of the Parameters of a Subharmonic Mixer on a Resonant Tunneling Diode
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Calculation of the Parameters of a Subharmonic Mixer on a Resonant Tunneling Diode

机译:谐振隧穿二极管上次谐波混频器参数的计算

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摘要

The effect of the width and composition of the layers of a resonant tunneling diode on its properties as an active element of a subharmonic mixer is investigated. The dependence of the conversion losses of a sub-harmonic mixer with a resonant tunneling diode on the local oscillator power and other parameters is calculated. The standing wave ratios of the mixer at the signal and oscillator inputs are estimated, and the dependence of the optimum oscillator power on the shape of the Ⅰ-Ⅴ characteristic of the resonant tunneling diode is determined.
机译:研究了谐振隧穿二极管各层的宽度和组成对其作为次谐波混频器有源元件的性能的影响。计算了带有谐振隧道二极管的次谐波混频器的转换损耗对本地振荡器功率和其他参数的依赖性。估算信号和振荡器输入端混频器的驻波比,并确定最佳振荡器功率对谐振隧穿二极管的Ⅰ-Ⅴ特性曲线的依赖性。

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