Microstructuring of the Surface of High-Resistivity Single-Crystalline Silicon by Chemical Etching

摘要

The influence of various etching processes on the single-crystalline (100) silicon surface is studied. It is demonstrated that microstructuring of the surface of high-resistivity single-crystalline silicon in alkaline solutions is better performed using electrolytic methods at temperatures no lower than 80 degrees C. Etch patterns with better-defined side faces are formed by anisotropic etching with the addition of hydrogen peroxide.