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Ultrasonic characterization of porous silicon using a genetic algorithm to solve the inverse problem

机译:用遗传算法超声表征多孔硅以解决反问题

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摘要

This paper presents a method for ultrasonic characterization of porous silicon in which a genetic algorithm based optimization is used to solve the inverse problem. A one-dimensional model describing wave propagation through a water immersed sample is used in order to compute transmission spectra. Then, a water immersion wide bandwidth measurement is performed using an insertion/substitution method and the spectrum of signals transmitted through the sample is calculated using Fast Fourier Transform. In order to obtain parameters such as thickness, longitudinal wave velocity or density, a genetic algorithm based optimization is used. A validation of the method is performed using aluminium plates with two different thicknesses as references: a good agreement on acoustical parameters can be observed, even in the case where ultrasonic signals overlap. Finally, two samples, i.e. a bulk silicon wafer and a porous silicon layer etched on silicon wafer, are evaluated. A good agreement between retrieved values and theoretical ones is observed. Hypothesis to explain slight discrepancies is proposed.
机译:本文提出了一种多孔硅的超声表征方法,其中基于遗传算法的优化用于解决反问题。为了计算透射光谱,使用了一维模型来描述通过水浸样本的波传播。然后,使用插入/替换方法执行水浸宽带带宽测量,并使用快速傅立叶变换计算通过样品传输的信号频谱。为了获得诸如厚度,纵向波速度或密度的参数,使用了基于遗传算法的优化。使用两种不同厚度的铝板作为参考来验证该方法:即使在超声信号重叠的情况下,也可以观察到声学参数的良好一致性。最后,评估两个样品,即块状硅晶片和在硅晶片上蚀刻的多孔硅层。观察到的取值与理论值之间有很好的一致性。提出了解释轻微差异的假设。

著录项

  • 来源
    《NDT & E international》 |2014年第3期|93-98|共6页
  • 作者单位

    GREMAN, University of Tours, Parc de Grandmont, 37200 Tours, France,GREMAN, ENI Val de Loire, 3 rue de la chocolaterie, 41000 Blois, France;

    GREMAN, ENI Val de Loire, 3 rue de la chocolaterie, 41000 Blois, France,GREMAN, University of Tours, Parc de Grandmont, 37200 Tours, France;

    GREMAN, University of Tours, Parc de Grandmont, 37200 Tours, France;

    GREMAN, University of Tours, Parc de Grandmont, 37200 Tours, France,GREMAN, ENI Val de Loire, 3 rue de la chocolaterie, 41000 Blois, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Genetic algorithm; Inverse problem resolution; Ultrasonic NDE; Porous silicon;

    机译:遗传算法反问题解决;超声波NDE多孔硅;
  • 入库时间 2022-08-17 13:24:37

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