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Controlled surface charging as a depth-profiling probe for mesoscopic layers

机译:受控表面充电,作为介观层的深度分析探针

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Probing the structure of material layers just a few nanometres thick requires analytical techniques with high depth sensitivity. X-ray photoelectron spectroscopy (XPS) provides one such method, but obtaining vertically resolved structural information from the raw data is not straightforward. There are several XPS depth-profiling methods, including ion etching, angle-resolved XPS (ref. 2) and Tougaard's approach, but all suffer various limitations. Here we report a simple, non-destructive XPS depth-profiling method that yields accurate depth information with nanometre resolution. We demonstrate the technique using self-assembled multilayers on gold surfaces; the former contain 'marker' monolayers that have been inserted at predetermined depths. A controllable potential gradient is established vertically through the sample by charging the surface of the dielectric overlayer with an electron flood gun. The local potential is probed by measuring XPS line shifts, which correlate directly with the vertical position of atoms. We term the method 'controlled surface charging', and expect it to be generally applicable to a large variety of mesoscopic heterostructures.
机译:要探测仅几纳米厚的材料层结构,就需要具有高深度灵敏度的分析技术。 X射线光电子能谱(XPS)提供了一种这样的方法,但是从原始数据中获得垂直解析的结构信息并非易事。 XPS的深度剖析方法有几种,包括离子蚀刻,角度分辨XPS(参考文献2)和Tougaard的方法,但都受到各种限制。在这里,我们报告了一种简单,无损的XPS深度剖析方法,该方法可产生具有纳米分辨率的准确深度信息。我们演示了在金表面上使用自组装多层的技术。前者包含已插入预定深度的“标记”单层。通过用电子溢流枪给电介质覆盖层的表面充电,可以在整个样品中垂直建立可控的电位梯度。通过测量XPS线位移来探测局部电势,XPS线位移与原子的垂直位置直接相关。我们称该方法为“受控表面电荷”,并期望它通常适用于各种各样的介观异质结构。

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