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All-optical control of light on a silicon chip

机译:硅芯片上的光的全光学控制

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Photonic circuits, in which beams of light redirect the flow of other beams of light, are a long-standing goal for developing highly integrated optical communication components(1-3). Furthermore, it is highly desirable to use silicon - the dominant material in the microelectronic industry - as the platform for such circuits. Photonic structures that bend, split, couple and filter light have recently been demonstrated in silicon(4,5), but the flow of light in these structures is predetermined and cannot be readily modulated during operation. All-optical switches and modulators have been demonstrated with III-V compound semiconductors(6,7), but achieving the same in silicon is challenging owing to its relatively weak nonlinear optical properties. Indeed, all-optical switching in silicon has only been achieved by using extremely high powers(8-15) in large or non-planar structures, where the modulated light is propagating out-of-plane. Such high powers, large dimensions and non-planar geometries are inappropriate for effective on-chip integration. Here we present the experimental demonstration of fast all-optical switching on silicon using highly light-confining structures to enhance the sensitivity of light to small changes in refractive index. The transmission of the structure can be modulated by up to 94% in less than 500 ps using light pulses with energies as low as 25 pJ. These results confirm the recent theoretical prediction(16) of efficient optical switching in silicon using resonant structures.
机译:光子电路中光束重新定向其他光束的流动是开发高度集成的光通信组件的长期目标(1-3)。此外,非常需要使用硅(微电子工业中的主要材料)作为此类电路的平台。弯曲,分裂,耦合和过滤光的光子结构最近在硅中得到了证明(4,5),但是这些结构中的光流是预先确定的,在操作过程中不易调制。全光开关和调制器已经用III-V化合物半导体进行了演示(6,7),但是由于其相对较弱的非线性光学特性,在硅中实现相同的挑战。实际上,只有在大型或非平面结构中使用极高的功率(8-15)才能实现硅中的全光切换,在这些结构中,调制光在平面外传播。这种高功率,大尺寸和非平面几何形状不适合有效的片上集成。在这里,我们展示了使用高度限光的结构在硅上进行快速全光切换的实验演示,以增强光对折射率的小变化的敏感性。使用能量低至25 pJ的光脉冲,可以在不到500 ps的时间内将结构的透射率调制高达94%。这些结果证实了使用谐振结构在硅中进行有效光开关的最新理论预测(16)。

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