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Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures

机译：磁性拓扑绝缘体/反铁磁异质结构中的定制交换耦合

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摘要

Magnetic topological insulators such as Cr-doped (Bi1Sb)_2Te_3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures exhibiting Neel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-doped (Bi1Sb)_2Te_3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of magnetic topological insulators. Proximity effects are shown to induce an interfacial spin texture modulation and establish an effective long-range exchange coupling mediated by antiferromagnetism, which significantly enhances the magnetic ordering temperature in the superlattice. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.
机译：诸如Cr掺杂的（Bi1Sb）_2Te_3之类的磁性拓扑绝缘体为实现通用的时间反转对称性打破物理提供了平台。通过构造在反铁磁性CrSb中表现出Neel级和在Cr掺杂（Bi1Sb）_2Te_3中表现出铁磁性顺序的异质结构，我们可以实现可以通过人工结构工程定制的新兴界面磁性现象。通过对异质结构和超晶格进行有意的几何设计，我们证明了反铁磁交换耦合在操纵磁性拓扑绝缘子的磁性方面的应用。邻近效应显示出可诱导界面自旋纹理调制，并建立起由反铁磁性介导的有效的长距离交换耦合，从而显着提高了超晶格中的磁有序温度。这项工作为将拓扑绝缘子与反铁磁材料集成提供了新的框架，并揭示了通往无耗散拓扑反铁磁自旋电子学的新途径。

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  • 来源
    《Nature Materials》 |2017年第1期|94-100|共7页
  • 作者

    Qing Lin He; Xufeng Kou; Alexander J. Grutter; Gen Yin; Lei Pan; Xiaoyu Che; Yuxiang Liu; Tianxiao Nie; Bin Zhang; Steven M. Disseler; Brian J. Kirby; William Ratcliff II; Qiming Shao; Koichi Murata; Xiaodan Zhu; Guoqiang Yu; Yabin Fan; Mohammad Montazeri; Xiaodong Han; Julie A. Borchers; Kang L. Wang;

  • 作者单位

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.,These authors contributed equally to this work.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.,These authors contributed equally to this work.;

    NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, USA.,These authors contributed equally to this work.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.,These authors contributed equally to this work.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, 100124 Beijing, China.;

    NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, USA.;

    NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, USA.;

    NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.;

    Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, 100124 Beijing, China.;

    NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, USA.;

    Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA;

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