Molecular Beam Epitaxy of III-Nitride Nanowires: Emerging Applications From Deep-Ultraviolet Light Emitters and Micro-LEDs to Artificial Photosynthesis

摘要

Low-dimensional nanowires have received increased interest as building blocks for electronic and photonic devices. In this article, we review the recent progress made on III -nitridenanowire photonic devices by molecular beam epitaxy (MBE), with a focus on micro-LED s, deep-ultraviolet (UV)-light emitters, and solar fuel and artificial photosynthesis devices. The challenges and prospects of III -nitride nanowires for these applications are also discussed.