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SYNTHESIS, STRUCTURE, AND LUMINESCENCE PROPERTIES OF ZnSnO3 NANOWIRES

机译:ZnSnO3纳米线的合成,结构和发光性能

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摘要

ZnSnO3 nanowires were synthesized on Si substrates by thermal evaporation of a mixture of ZnO, SnO2 and graphite powders. The nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The ZnSnO3 nanowires varied from 10 to 100 nm in diameter and up to a few hundred of micrometers in length. Transmission electron microscopy and X-ray diffraction revealed that the nanowires are multiphase nanostructures containing ZnSnO3, Zn2SnO4, ZnO, and SnO2 phases. Photoluminescence measurements showed that ZnSnO3 nanowires had a sharp ultraviolet emission peak at approximately 375 nm as well as a broad green emission band centered at approximately 510 nm. The violet emission of ZnSnO3 nanowires exhibits a blue shift by approximately 5 nm compared to that of ZnO nanowires and the visible emission of ZnO nanowires shifted from the orange region to the green region, which should be attributed to the narrowing of Eg. Thermal annealing enhanced the green emission but degraded the ultraviolet emission of the ZnSnO3 nanowires. In addition, the origin of the enhanced luminescence of ZnSnO3 nanowires compared to ZnO and SnO2 nanowires is discussed.
机译:通过热蒸发ZnO,SnO2和石墨粉的混合物,在Si基片上合成ZnSnO3纳米线。通过X射线衍射,扫描电子显微镜,透射电子显微镜和光致发光光谱对纳米线进行表征。 ZnSnO3纳米线的直径从10到100 nm不等,长度可达几百微米。透射电子显微镜和X射线衍射表明,纳米线是包含ZnSnO3,Zn2SnO4,ZnO和SnO2相的多相纳米结构。光致发光测量结果表明,ZnSnO3纳米线在大约375 nm处有一个尖锐的紫外线发射峰,并且在大约510 nm处有一个宽的绿色发射带。与ZnO纳米线相比,ZnSnO3纳米线的紫色发射呈现约5 nm的蓝移,ZnO纳米线的可见发射从橙色区域变为绿色区域,这应归因于Eg的变窄。热退火增强了ZnSnO3纳米线的绿色发射,但降低了其紫外线发射。此外,讨论了与ZnO和SnO2纳米线相比,ZnSnO3纳米线增强发光的起源。

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  • 来源
    《NANO 》 |2012年第2期| p.1-7| 共7页
  • 作者单位

    Department of Materials Science and Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

    Department of Materials Science and Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

    Department of Materials Science and Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

    Department of Electronic Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

    Bio-IT Convergence Center, Korea Institute of Ceramic Engineering and Technology, 103 Fashion Danji-gil Geumcheon-gu, Seoul 153-801, Republic of Korea;

    Department of Materials Science and Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnSnO3 nanowires; annealing; photoluminescence; transmission electron microscopy; energy-dispersive X-ray spectroscopy.;

    机译:ZnSnO3纳米线;退火;光致发光透射电子显微镜;能量色散X射线光谱。;

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