PA Delivers 5 W From 14.5 To 16 GHz

摘要

To target medium-power Ku-band applications, a four-stage power amplifier (PA) provides 5 W of saturated output power. Dubbed the XP1058-BD, this gallium-arsenide (GaAs), monolithic-microwave-integrated-circuitrn(MMIC) PA achieves 27 dB small signal gain and +37 dBm saturated output power. The high-power amplifier uses a dual-sided bias architecture, covers 14.5 to 16 GHz, and achieves an output third-order intercept point of +44 dBm. The chip has surface passivation to protect and provide arnrugged part. Backside via holes and gold metallization allow either a conductive epoxy or eutectic solder die attach process. The device is well suited for millimeter-wave military, radar, satellite, and weather applications. Samples and production quantities are available in four weeks.