A Dynamic Drain Current Model for MESFET/HEMTs Valid Under Varying Static Bias and Temperature Conditions

摘要

Modifications to the Dortu-Muller DC drain current model for GaAs MESFET/HEMT devices that enable the dynamic output characteristics of the device to he simulated under different temperature and static bias conditions are presented. The modifications illustrate the difficulties in the simulation of the changes introduced into the device dynamic characteristics by frequency dispersion, thermal and electric field effects.