Anew line of thick-film aluminum nitride (AlN) resistors and terminations has been introduced that complements existing company offerings. Traditionally, RF power resistive components have incorporated the use of beryllium oxide (BeO) ceramic material as a ceramic substrate; however, due to international pressure to remove BeO from products, alternative materials such as AlN have received much attention in the wireless industry. Although BeO is harmless in the ceramic form, the dust or powder form can be harmful if inhaled in sufficient quantities. OSHA lists BeO dust as a hazardous substance and a probable carcinogen in humans. The legal airborne permissible exposure limit (PEL) is 0.002 mg/m~3 averaged over an eight-hour shift. AlN material has emerged as the leading alternative to BeO.
展开▼
