HFET Transistors with Outstanding Performance and Durability

摘要

Today's circuit designers are tasked with creating a high performance product that will stand out in a market crowded with competition. Yet relying on standard 50 Ω MMIC "gain block" devices makes it increasingly difficult for the RF designer to differentiate the specified performance of their radio product. One solution addressing this dilemma is found in discrete devices that have excellent performance and reliability, and can be easily optimized for an exact fit in a given application.