SHOWING BIOS

摘要

Gn HEMT based power amplifiers (PA) can have somewhat different compression characteristics compared to other RF semiconductor based PAs. Depending on the setting of the quiescent drain current they often will have soft compression characteristics. Very often a conventional P1dB metric is not valid for a GaN HEMT PA since the real criteria are peak output power, two-tone nonlinearity and spectral re-growth which may depend more on Psat than P1dB. Of course,