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首页> 外文期刊>Microwave Engineering Europe >X-parameters: The New Paradigm For Measurement, Modeling, And Design Of Nonlinear Rf And Microwave Components
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X-parameters: The New Paradigm For Measurement, Modeling, And Design Of Nonlinear Rf And Microwave Components

机译:X参数:非线性Rf和微波组件的测量,建模和设计的新范例

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For more than 40 years, S-parameters, or scattering parameters, have been among the most important of all the foundations of microwave theory and techniques.rnS-parameters are easy to measure at high frequencies with a vector network analyzer (VNA). A well-calibrated S-parameter measurement represents intrinsic properties of the DUT, independent of the VNA system used to characterize it. These DUT properties (gain, loss, reflection coefficient, etc.) are familiar, intuitive, and important. S-parameters are still commonly used for nonlinear devices such as transistors and amplifiers. The problem, often forgotten or taken for granted, is that S-parameters only describe properly the behavior of a nonlinear component in response to small signal stimuli for which the device can be approximated as a linear component at a fixed DC, or static, operating point.
机译:40多年来,S参数或散射参数已成为微波理论和技术的所有基础中最重要的参数。rnS参数易于使用矢量网络分析仪(VNA)在高频下进行测量。良好校准的S参数测量值代表DUT的固有属性,而与用于表征DUT的VNA系统无关。这些DUT属性(增益,损耗,反射系数等)是熟悉,直观且重要的。 S参数仍常用于非线性器件,例如晶体管和放大器。通常被遗忘或理所当然的问题是,S参数仅适当地描述了非线性组件响应小信号刺激的行为,在固定直流或静态操作下,该设备可以近似为线性组件。点。

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