机译:Doherty功率放大器的栅极偏置自适应,可实现高效率和大功率
Div. of IT Convergence Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea;
HEMT circuits; III-V semiconductors; UHF power amplifiers; gallium compounds; wide band gap semiconductors; Doherty power amplifier; GaN; HEMT; LTE; Long Term Evolution signal; PAPR; carrier PA; efficiency 57.2 percent; efficiency 60.5 percent; frequency 1.94 GHz; gain 12.75 dB; gate bias adaptation; gate bias voltage; high electron mobility transistors; knee voltage effect; peak-to-average power ratio; power 45 W; symmetric Doherty PA; Gain; Gallium nitride; HEMTs; Logic gates; Long Term Evolution; Peak to average power ratio; Power generation; Drain efficiency (DE); Gallium nitride (GaN); long term evolution (LTE); power amplifier (PA);
机译:使用互惠栅极偏置的超宽带双模Doherty功率放大器,适用于5G应用
机译:利用栅极和漏极偏置控制增强三路Doherty功率放大器的性能
机译:利用栅极偏置自适应的高效3级Doherty功率放大器
机译:使用电源开关和栅极偏置调制提高Doherty功率放大器的效率
机译:8GHz的高功率和高效Doherty功率放大器设计,无人机应用
机译:功率放大器具有大型高效范围的5G通信
机译:采用相位周期匹配网络的多频带双模Doherty功率放大器和5G应用的互惠栅极偏置