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首页> 外文期刊>IEEE microwave and wireless components letters >Compact Diode Connected MOSFET Detector for On-Chip Millimeter-Wave Voltage Measurements
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Compact Diode Connected MOSFET Detector for On-Chip Millimeter-Wave Voltage Measurements

机译:紧凑型二极管连接的MOSFET检测器,用于片上毫米波电压测量

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摘要

A root-mean-square diode connected MOSFET detector for estimating the signal voltage of internal nodes of millimeter-wave circuits is demonstrated. These detectors fabricated in a foundry 65 nm CMOS process provide an affordable means for RF testing, built-in self-test as well as debugging of mm-wave circuits. This broadband detector operates from 80–110 GHz with detector gain of 8.5 at 60 nA bias. This in combination with high input impedance that results in less than 0.15 dB insertion loss relative to a thru structure, and a small area of 20 makes the detector non-invasive.
机译:说明了用于估计毫米波电路内部节点信号电压的均方根二极管连接MOSFET检测器。这些探测器采用铸造65纳米CMOS工艺制造,为RF测试,内置自测试以及毫米波电路调试提供了一种经济实惠的手段。该宽带检波器的工作频率为80–110 GHz,偏置电压为60 nA时检波器增益为8.5。这与高输入阻抗相结合,相对于直通结构而言,插入损耗小于0.15 dB,而20的小面积使检测器无创。

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