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机译:3-20-GHz GAN MMIC功率放大器设计通过COUT补偿策略
Cardiff Univ Ctr High Frequency Engn Cardiff CF24 3AA Wales|Univ Pedag & Tecnol Colombia Res Grp GINTEL Sogamoso 150003 Colombia;
Cardiff Univ Ctr High Frequency Engn Cardiff CF24 3AA Wales;
Politecn Torino Dept Elect I-10129 Turin Italy|Microwave Engn Ctr Space Applicat MECSA I-00133 Rome Italy;
Politecn Torino Dept Elect I-10129 Turin Italy;
Cardiff Univ Ctr High Frequency Engn Cardiff CF24 3AA Wales;
Cardiff Univ Ctr High Frequency Engn Cardiff CF24 3AA Wales;
Optimized production technology; Power generation; Gallium nitride; Gain; Impedance; Capacitance; Wideband; Broadband matching networks; FETs; gallium nitride (GaN); microwave amplifiers; wideband;
机译:6-W,28-38-GHZ GAN功率放大器MMIC中竞争匹配的限制与实施策略
机译:用于电子战的SiC大功率放大器MMIC上的6-18 GHz GaN的设计与表征
机译:利用等效输出阻抗模型设计X波段40 W功率放大器GaN MMIC
机译:采用先进的0.15µm GaN工艺的16–40GHz GaN分布式功率放大器MMIC的设计和性能
机译:高效,线性和宽带GaN MMIC功率放大器。
机译:利用晶体管单元非对称功率组合的Ku波段50 W GaN HEMT功率放大器
机译:高功率/高带宽GaN MMIC和 ud混合放大器:设计与表征
机译:Ku和K波段GaN高功率放大器mmIC。