High power/High bandwidth GaN MMICs andudhybrid amplifiers: design and characterization

摘要

Broadband microstrip and coplanar MMICudamplifiers featuring beyond 10W for X-band radarudapplications are realized in a AlGaN/GaN HEMTudtechnology on 2" s.i. SiC substrate. Single-stage and dualstage demonstrators with flat gain from 1 GHz to 2.7 GHzudand up to 40 W peak power in hybrid microstrip technologyudfor basestation applications are presented. The performanceudillustrates the potential of this technology with very highudbandwidth and superior power density in comparison toudGaAs.