Design and Simulation of an RF Feedback Oscillator Circuit Using Conventional X-Parameters

摘要

This letter demonstrates for the first time the usefulness of the X-parameters under 50-Omega load condition (conventional X-parameters) for simulating and designing RF feedback oscillator circuits. The measurement procedure to characterize a GaAs FET ATF34143 with conventional X-parameters is presented. The measured X-parameters' data are subsequently used in the design of an RF feedback oscillator at 2.47 GHz. The comparison of the experimental results with the harmonic balance simulations demonstrates the strengths and weakness that conventional X-parameters have to predict the electrical behavior of the feedback oscillator.