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首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >X-Band to W-Band Frequency Multiplier in 65 nm CMOS Process
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X-Band to W-Band Frequency Multiplier in 65 nm CMOS Process

机译:采用65 nm CMOS工艺的X波段至W波段倍频器

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摘要

A compact single chip x9 frequency multiplier from X band to W band implemented in 65 nm CMOS is presented. A chain of five transformer coupled stages is used, including two triplers, realized with differential common source amplifiers at class-C mode. The circuit reaches saturated output power of $-3.2 ~{rm dBm}$ at 91.8 GHz with a 7.2% bandwidth from 88.9 to 95.5 GHz. The suppression of unwanted harmonics is better than 16 dBc across the bandwidth. The core design occupies 246 $mu {rm m} times ,$706 $mu {rm m}$ and consumes 120 mW from a 1.2 V supply. Supply voltage increase to 1.3 V yields a peak output power of $-2.7 ~{rm dBm}$ and 160 mW of dc power.
机译:提出了在65 nm CMOS中实现的从X波段到W波段的紧凑型单芯片x9倍频器。使用了由五个变压器耦合级组成的链,其中包括两个三路器,由C类模式的差分共源放大器实现。该电路在91.8 GHz时达到饱和输出功率$ -3.2〜{rm dBm} $,带宽为88.9至95.5 GHz,带宽为7.2%。在整个带宽范围内,对有害谐波的抑制优于16 dBc。核心设计的功耗为246μm{rm m}倍,是706μm{rm m} $,在1.2 V电源下的功耗为120 mW。电源电压增加到1.3 V时,将产生-2.7〜{rm dBm} $的峰值输出功率和160 mW的直流功率。

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