A Low-Noise 150–210 GHz Detector in 45 nm CMOS SOI

摘要

This letter presents a G-band detector in a 45 nm silicon-on-insulator CMOS technology. The measured detector responsivity is 3 kV/W at 170–180 GHz with a 3 dB bandwidth of 150–210 GHz. The detector results in a Noise-Equivalent-Power (NEP) of 8–10 pW/Hz $^{1/2}$ at a bias current of 50–200 $mu$A for an IF of 10 MHz and is well matched with an input return loss $> 10$ dB at 167–194 GHz. The responsivity and NEP values are close to the best SiGe detectors, and show that advanced CMOS nodes are suitable for ${sim}200$ GHz imaging arrays.