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Slotted capacitive microphone with sputtered aluminum diaphragm and photoresist sacrificial layer

机译:带有铝膜溅射和光刻胶牺牲层的缝隙电容式麦克风

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摘要

In this paper, we have fabricated a new microphone using aluminum (Al) slotted perforated diaphragm and back plate electrode, and photoresist (AZ1500) sacrificial layer on silicon wafer. The novelty of this method relies on aluminum diaphragm includes some slots to reduce the effect of residual stress and stiffness of diaphragm for increasing the microphone sensitivity. The acoustic holes are made on diaphragm to reduce the air damping, and avoid the disadvantages of non standard silicon processing for making back chamber and holes in back plate, which are more complex and expensive. Photoresist sacrificial layer is easy to deposition by spin coater and also easy to release by acetone. Moreover, acetone has a high selectivity to resist compared to silicon oxide and Al, thus it completely removes sacrificial resist without incurring significant damage silicon oxide and Al. The measured zero bias capacitance is 17.5 pF, and its pull-in voltage is 25 V. The microphone has been tested with external amplifier and speaker, the external amplifier was able to detect the sound waves from microphone on speaker and oscilloscope. The maximum amplitude of output speech signal of amplifier is 45 mV, and the maximum output of MEMS microphone is 1.125 μV.
机译:在本文中,我们使用铝制(Al)开槽穿孔膜片和背板电极,以及硅晶片上的光刻胶(AZ1500)牺牲层制作了一种新型麦克风。这种方法的新颖之处在于铝制振膜,其中包括一些狭缝,以减少残余应力和振膜刚度的影响,从而提高麦克风的灵敏度。在膜片上制造声孔以减少空气阻尼,并避免了用于制造后室和背板孔的非标准硅工艺的缺点,这些缺点更加复杂且昂贵。光刻胶牺牲层易于通过旋涂机沉积,也易于通过丙酮释放。此外,与氧化硅和Al相比,丙酮对抗蚀剂的选择性高,因此可以完全去除牺牲抗蚀剂,而不会对氧化硅和Al造成重大损害。测得的零偏置电容为17.5 pF,其吸合电压为25V。麦克风已通过外部放大器和扬声器进行了测试,外部放大器能够检测扬声器和示波器上麦克风的声波。放大器的输出语音信号的最大幅度为45 mV,而MEMS麦克风的最大输出为1.125μV。

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