Neural network based modeling of diffusion process for high-speed avalanche photodiodes fabrication

摘要

This paper presents the modeling methodology of Zn diffusion process utilized for high -speed avalanche photodiode fabrication using neural networks. The modeling can characterize the effects of diffusion process conditions on the performance metrics of diffusion process. Three different InP-basd test structures with different doping concentrations in diffused layer are explored. Three input factors (sealing pressure, amount of Zn_3P_2 source per volume, and doping concentration of diffused layer) are examined with respect to the two performance metrics (diffusion-rate and Zn doping concentration) by means of D-optimal design experiment.