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Power efficiency evaluation in Dickson and voltage doubler charge pump topologies

机译:Dickson和倍压器电荷泵拓扑中的功率效率评估

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This paper presents a theoretical and experimental comparison between two charge pump architectures commonly used in CMOS integrated circuits, namely the Dickson scheme and the cascade of voltage doublers. The comparison is carried out considering power efficiency as the main feature of interest. To compare the two topologies, two charge pumps were integrated in 0.18-μm triple-well CMOS technology. The two charge pumps were designed with the same operating clock frequency, the same storage capacitance per stage, and the same number of stages (and, thus, approximately the same area). The theoretical and the experimental comparison showed that the power efficiency of the voltage doubler scheme is higher (by about 13% at I_(out) = 1 mA), mainly thanks to the lower parasitic capacitance associated to the boosted nodes.
机译:本文介绍了在CMOS集成电路中常用的两种电荷泵架构(即Dickson方案和倍压器级联)之间的理论和实验比较。进行比较时,将功率效率作为关注的主要特征。为了比较这两种拓扑,两个电荷泵被集成在0.18μm三阱CMOS技术中。两个电荷泵的设计具有相同的工作时钟频率,每级相同的存储电容以及相同的级数(因此,面积大致相同)。理论上和实验上的比较表明,倍压器方案的功率效率更高(在I_(out)= 1 mA时约为13%),这主要归功于与升压节点相关的寄生电容较低。

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