Study on the Al/silicon rich oxide/Si structure as a surge suppressor, DC, frequency response and modeling

摘要

In this work the possibility of using the Al/SRO/Si device as a surge suppressor is studied. DC, AC, and the frequency response of the device were investigated. Also the device was exposed to high voltage peaks. The High voltage peaks were generated using the human body model. Two devices were tested: simple MOS like capacitors, and input pads made of Al/SRO/Si connected to the gate of MOS transistors. Results show that these devices can uphold voltage peaks as big as 66 MV/cm and that they can be used for low frequency applications. It is also shown that, transistor gates connected to these input pads support higher voltage peaks compared with gates connected to standard input pad.