首页> 外文期刊>Microelectronics journal >Design technique for regulated cascode transimpedance amplifier using G_m/I_D methodology
【24h】

Design technique for regulated cascode transimpedance amplifier using G_m/I_D methodology

机译:基于G_m / I_D方法的可调节共源共栅跨阻放大器的设计技术

获取原文
获取原文并翻译 | 示例
       

摘要

This paper presents an approach using g(m)/I-D methodology for the design of the regulated cascode circuit (RGC) transimpedance amplifier (TIA) for optical receivers. The framework uses lookup tables produced using the g(m)/I-D methodology to define the sizing of the transistors needed to reach the required specifications. The presented framework has the advantage of setting limits on the design space using intuitive equations derived from the circuit analyses. This gives insight into the effect of changing the value of different circuit parameters on the resulting design performance while decreasing the calculation time to reach the desired design. The proposed method can reach the required specifications with the flexibility to minimize the DC power consumption or the total input referred noise. The framework is implemented in a 130 nm CMOS process with a 1.5 V supply voltage producing two different designs. Both designs met the required specifications while optimizing power consumption or noise and were validated using simulations. The results obtained are discussed and compared against other similar designs from the state-of-the-art.
机译:本文提出了一种使用g(m)/ I-D方法设计光接收器的共源共栅电路(RGC)跨阻放大器(TIA)的方法。该框架使用通过g(m)/ I-D方法生成的查找表来定义达到所需规格所需的晶体管尺寸。所提出的框架具有使用从电路分析得出的直观方程式对设计空间设置限制的优点。这可以深入了解更改不同电路参数的值对最终设计性能的影响,同时减少了达到所需设计所需的计算时间。所提出的方法可以灵活地将直流功耗或总输入参考噪声降至最低,从而达到所需的规格。该框架以130 nm CMOS工艺实现,电源电压为1.5 V,产生两种不同的设计。两种设计均满足要求的规格,同时优化了功耗或噪声,并通过仿真进行了验证。对获得的结果进行了讨论,并与最新技术的其他类似设计进行了比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号