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首页> 外文期刊>Microelectronic Engineering >Characterization of interfacial reaction and chemical bonding features of LaO_x/HfO_2 stack structure formed on thermally-grown SiO_2/Si(100)
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Characterization of interfacial reaction and chemical bonding features of LaO_x/HfO_2 stack structure formed on thermally-grown SiO_2/Si(100)

机译:热生长SiO_2 / Si(100)上形成的LaO_x / HfO_2堆叠结构的界面反应和化学键合特征

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摘要

A stack structure consisting of ~1.5 nm-thick LaO_x and ~4.0 nm-thick HfO_2 was formed on thermally grown SiO_2 on Si(100) by MOCVD using dipivaloymethanato precursors, and the influence of N_2 annealing on interfacial reaction for this stack structure was examined by using X-ray photoelectron spectros-copy and Fourier transform infrared attenuated total reflection. We found that compositional mixing between LaO_x and HfO_2 becomes significant from 600 ℃ upwards and that interfacial reaction between HfLa_yO_2 and SiO_2 proceeds consistently at 1000 ℃ in N_2 ambience.
机译:利用二金属甲胺基前体通过MOCVD在Si(100)上热生长的SiO_2上形成了由〜1.5 nm厚的LaO_x和〜4.0 nm厚的HfO_2组成的堆叠结构,并研究了N_2退火对界面反应的影响通过使用X射线光电子能谱和傅立叶变换红外衰减全反射。我们发现,LaO_x和HfO_2之间的成分混合从600℃开始变得显着,并且HfLa_yO_2和SiO_2之间的界面反应在N_2气氛中在1000℃持续进行。

著录项

  • 来源
    《Microelectronic Engineering》 |2009年第9期|1650-1653|共4页
  • 作者单位

    Graduate School of Advanced Sciences and Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima, Hiroshima 739-8530, Japan;

    Graduate School of Advanced Sciences and Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima, Hiroshima 739-8530, Japan;

    Graduate School of Advanced Sciences and Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima, Hiroshima 739-8530, Japan;

    Graduate School of Advanced Sciences and Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima, Hiroshima 739-8530, Japan;

    Graduate School of Advanced Sciences and Matter, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima, Hiroshima 739-8530, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    High-k dielectric; HfO_2; LaO_x; interfacial reaction; X-ray photoelectron spectroscopy;

    机译:高介电常数HfO_2;LaO_x;界面反应X射线光电子能谱;

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