Interface state density dependence on detection process in single electron photo-detector (photo-SET)

摘要

In this paper, we report the effect of optical power on interface state density (D-it) for the ultrasensitive single electron photodetector (photo-SET). To perform this work, Conductance-Capacitance-Voltage (C-G-V) techniques have been used, which form a method for the characterization of interface traps in MIS structures, taking into account the effect of the series resistance (R-s) at room temperature. To calculate the value of the density of interface states, (C-G-V) sweeps need to be corrected, analyzed and all extracted parameters would need to be recorded. Using Hill-Coleman method and a program developed using MATLAB, the calculated value of these interface state density (D-it) at 1 MHz was 2.4 . 10(12) eV(-1) cm(-2). The value of the interface state density (D-it) increase with increasing optical power. (C) 2016 Elsevier B.V. All rights reserved.