...
首页> 外文期刊>Microelectromechanical Systems, Journal of >Highly Reliable MEMS Temperature Sensors for 275 $^{ circ}hbox{C}$ Applications—Part 1: Design and Technology
【24h】

Highly Reliable MEMS Temperature Sensors for 275 $^{ circ}hbox{C}$ Applications—Part 1: Design and Technology

机译:适用于275个 $ ^ {circ} hbox {C} $ 应用的高可靠性MEMS温度传感器-第1部分:设计和技术

获取原文
获取原文并翻译 | 示例

摘要

This paper presents the design, fabrication, packaging, and experimental characterization of the first temperature-sensitive MEMS capacitors for health monitoring applications up to 275 $^{circ}hbox{C}$. The capacitive sensor chip is $2 times 2 hbox{mm}^{2}$ fabricated on a 500-$muhbox{m}$ -thick Si wafer and comprises an array of 220 individual $10 times 250 muhbox{m}^{2}$ inherently robust bimorphs. This first part focuses on the fabrication and packaging, thermomechanical design, electromagnetic modeling, and technology of the unpackaged and packaged bimorph beams. On the thermomechanical part, the measured profiles match theoretically predicted profiles from 20 $^{circ}hbox{C}$ to 250 $^{ circ}hbox{C}$ within 4% and 3% at the beam midpoints and tips, respectively. Similarly, experimentally obtained capacitance changes for five separate packaged devices show a mean error of less than 3% and a maximum error of less than 5% from the theoretical model up to 165 $^{circ} hbox{C}$. The packaged sensors simultaneously achieve for the first time: 1) high temperature operation; 2) monotonic capacitance–temperature response from 20 $^{circ} hbox{C}$ to 300 $^{circ}hbox{C}$; 3) hermetic sealing; 4) miniature size of $5.4 times 5.4 times 3.6 hbox{mm}^{3}$ ; and 5) capacitance quality factor - f over 5000 at 20 $^{circ} hbox{C}$ and 1000 at 160 $^{circ}hbox{C}$. Experimental results underline the tradeoffs between beam arrangement, attachment method to the package, and package to the quality factor of the device.$hfill$[2011-0316]
机译:本文介绍了用于健康监测应用的第一个温度敏感型MEMS电容器的设计,制造,封装和实验特性,该电容器的容量高达275 $ ^ circbox {C} $。电容式传感器芯片是$ 2×2 hbox {mm} ^ {2} $在500-muhbox {m} $-厚的Si晶片上制造的,并包含220个单独的$ 10×250 muhbox {m} ^ {2}的阵列$本质上强大的双压电晶片。第一部分着重于未包装和已包装的双压电晶片梁的制造和包装,热机械设计,电磁建模和技术。在热机械部分,测得的轮廓与理论预测的轮廓相匹配,分别在梁中点和尖端的4%和3%之内,从20 $ ^ hbox {C} $到250 $ ^ {circ} hbox {C} $ 。类似地,从理论模型到165 $ ^ hbox {C} $,实验获得的五个独立封装器件的电容变化显示出小于3%的平均误差和小于5%的最大误差。封装的传感器首次同时实现:1)高温操作; 2)单调电容-温度响应,从20 $ ^ hbox {C} $到300 $ ^ {circ} hbox {C} $; 3)密封; 4)微型尺寸$ 5.4乘以5.4乘以3.6 hbox {mm} ^ {3} $; 5)电容品质因数-f在20时为5000以上,在160时为1000以上。实验结果强调了光束布置,封装的附着方法以及封装与设备质量因子之间的权衡。$ hfill $ [2011-0316]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号