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机译:具有PZT薄膜的
Microsyst. Res. Center, Chongqing Univ., Chongqing, China;
aluminium; cantilevers; energy harvesting; lead compounds; micromechanical devices; platinum; rectifying circuits; silicon compounds; silicon-on-insulator; thin film devices; titanium; vibrations; Al-PZT-LaNiOsub3/sub-Pt-Ti-SiOsub2/sub; PZT thin film; SOI wafer; frequency 228.1 Hz; high voltage output MEMS vibration energy harvester; microelectromechanical system vibration energy harvester; multilayered films; open circuit voltage; power 157.9 muW; power 21.36 muW; power 59.62 muW; power density; power loss; proof mass dimensions; rectifier circuit; resonance frequency; silicon proof mass; size 0.052 mm; size 0.5 mm; size 12.4 mm; size 2.4 mm; size 3 mm; size 8 mm; voltage 3.94 V; voltage 5.72 V; Acceleration; Electrodes; Fabrication; Micromechanical devices; Resonant frequency; Silicon; Vibrations; MEMS; PZT thin film; high voltage; high voltage.; vibration energy harvester;
机译:具有低 inline-formula>
机译:多晶硅薄膜晶体管
机译:零-
机译:薄膜厚度对PZT薄膜横向压电系数(D_(31))的幅度和老化行为的影响
机译:用于压电MEMS机械能收集的PZT薄膜。
机译:线性和非线性MEMS尺度电磁能量采集器的建模和仿真用于随机振动环境
机译:一个高度双折射和非线性ASSE